Using the Fowler-Nordheim Diode

The diode model parameter LEVEL=2 selects the Fowler-Nordheim model. Fowler- Nordheim diodes are formed as a metal-insulator-semiconductor or as a semiconductor-insulator-semiconductor layer device. The insulator is sufficiently thin (100 Angstroms) to permit tunneling of carriers. It models electrically alterable memory cells, air-gap switches, and other insulation breakdown devices.

Fowler-Nordheim Diode Model Parameters LEVEL=2

Fowler-Nordheim Diode Model Parameters shows the Fowler-Nordheim diode model parameters for LEVEL 2.

Table 15-11: Fowler-Nordheim Diode Model Parameters

Name (alias)

Units

Default

Description

EF

V/cm

1.0e8

Forward critical electric field

ER

V/cm

EF

Reverse critical electric field

JF

amp/V 2

1.0e-10

Forward Fowler-Nordheim current coefficient

JR

amp/V 2

JF

Reverse Fowler-Nordheim current coefficient

L

m

0.0

Length of diode for calculation of Fowler-Nordheim current
Leff = L · SCALM · SHRINK + XWeff

TOX

Å

100.0

Thickness of oxide layer

W

m

0.0

Width of diode for calculation of Fowler-Nordheim current
Weff = W · SCALM · SHRINK + XWeff

XW

m

0.0

XWeff = XW · SCALM

Using Fowler-Nordheim Diode Equations

The DC characteristics of the Fowler-Nordheim diode are modeled by the following forward and reverse nonlinear current source equations. In the following equations:

 

Forward Bias:

 

Reverse Bias: vd < 0

 

Fowler-Nordheim Diode Capacitances

The Fowler-Nordheim diode capacitance is a constant derived from:

 

Star-Hspice Manual - Release 2001.2 - June 2001